The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
نویسندگان
چکیده
Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.
منابع مشابه
Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition
Erratum The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: " Reference 1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. permits unrestricted use, distribution, and reproduction in any medium, provided you give appropria...
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